J201 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

1. Fet J211
2. J201 Jfet Schematic

Наименование прибора: J201

J201 Datasheet, J201 PDF, J201 Data sheet, J201 manual, J201 pdf, J201, datenblatt, Electronics J201, alldatasheet, free, datasheet, Datasheets, data sheet, datas. There are no models available for Fairchild Semiconductor J201 yet. We can contact you when ECAD models become available. If you need symbols, footprints, or 3D models immediately, you may purchase them here. Your first request is free! A Brief Overview of FETs. A FET, or a field-effect transistor, is a transistor (funnily enough) that uses. 2020 popular 1 trends in Electronic Components & Supplies, Transistors, Integrated Circuits, Consumer Electronics with J201 and 1. Discover over 235 of our best selection of 1 on AliExpress.com.

Тип транзистора: JFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 0.625 W

Предельно допустимое напряжение сток-исток |Uds|: 40 V

Предельно допустимое напряжение затвор-исток |Ugs|: 1.5 V

Максимально допустимый постоянный ток стока |Id|: 0.001 A

Fet J211

Максимальная температура канала (Tj): 150 °C

Тип корпуса: TO-92

J201 Datasheet (PDF)

0.1. 2sj201.pdf Size:268K _toshiba

2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm High breakdown voltage : VDSS = -200 V High forward transfer admittance : |Yfs| = 5.0 S (typ.) Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS -200 VJEDEC Gate-source voltag

0.2. j201.pdf Size:851K _fairchild_semi

J201 MMBFJ201J202 MMBFJ202GSTO-92GS SOT-23 NOTE: Source & DrainDD are interchangeableMark: 62P / 62QN-Channel General Purpose AmplifierThis device is designed primarily for low level audio and generalpurpose applications with high impedance signal sources. Sourcedfrom Process 52.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value Uni

0.3. j201 j202 mmbfj201 mmbfj202 mmbfj203.pdf Size:783K _fairchild_semi

January 2008J201 - J202 / MMBFJ201 - MMBFJ203N-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 52.TO-92 SOT-2332MarkingMarking J201MMBFJ201 : 62PJ202MMBFJ202 : 62Q1 11. Drain 2. Source 3. Gate 1. Drain 2. Source 3. GateAbsolute

0.4. j201 j202 j204c sst201 sst202 sst204c.pdf Size:78K _vishay

J/SST201 Series Vishay SiliconixN-Channel JFETsJ201 SST201J202 SST202J204 SST204PRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)J/SST201 -0.3 to -1.5 -40 0.5 0.2J/SST202 -0.8 to -4 -40 1 0.9J/SST204 -0.3 to -2 -25 0.5 0.2FEATURES BENEFITS APPLICATIONSD Low Cutoff Voltage: J201

0.5. j201 j202 j203 j204 sst201 sst202 sst203 sst204.pdf Size:22K _calogic

N-Channel JFETGeneral Purpose AmplifierCORPORATIONJ201 J204 / SST201 SST204FEATURES ABSOLUTE MAXIMUM RATINGS(TA = 25oC unless otherwise specified) High Input Impedance Low IGSS Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40VGate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mAStorage Temperature Range

0.6. cj201nl.pdf Size:151K _jiangsu

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors CJ201NL TRANSISTOR (NPN) SOT23 FEATURES High Collector Current Capability Low Collector-emitter Saturation Voltage High Efficiency Leading to Less Heat Generation 1. BASE Reduced PCB Requirements 2. EMITTER Alternatived Effectively to MOSFETS in Specific Applications

0.7. lj2015-52.pdf Size:105K _china

LJ2015-52FD75C NPN P T =25 75 WCM CI 10 ACMT 150 jmT -55~150 stgV I 2mA 50 V(BR)CBO CBV I 2mA 50 V(BR)CEO CEI V =20V 2 mACBO CBI V =20V 2 mACEO EBV 2.5 VBEsatI =5ACI =0.5AB

0.8. cs7456 lj2015-53.pdf Size:70K _china

LJ2015-53CS7456DP N P T =25 1.9 WD AI V =10V,T =25 5.7 AD GS AI 40 ADMV 20 VGST +150 jmT -55 +150 stgR 65thJA /WR 1.8thJCBV V =0V,I =0.25mA 100 VDSS GS DV =10V,I =9.3A 0.025

Другие MOSFET... JFTJ105, J174, J175, J176, J177, MMBFJ175, MMBFJ176, MMBFJ177, IRF740, J202, MMBFJ201, MMBFJ202, J210, MMBFJ210, MMBFJ211, MMBFJ212, J270.

Список транзисторов

Обновления

MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02

J201

Fairchild Semiconductor	Купить форма запроса
IC AMP GP N-CHAN 40V 50MA TO-92
Категория:		Discrete Semiconductor Products
TO-92
Год:	99+
Datasheet (Техническое описание) J201 Поиск в бесплатном архиве даташитов datasheet.su Посмотреть все характеристики Technical/Catalog Information J201 Vendor Fairchild Semiconductor Category Discrete Semiconductor Products Mounting Type Through Hole FET Polarity N-Channel Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 200??A @ 20V Gate to Source Voltage (Vgs Max) * Input Capacitance (Ciss) @ Vds - Power - Max 625mW Packaging Bulk Package / Case TO-92 Voltage - Cutoff (VGS off) @ Id 300mV @ 10nA Voltage - Breakdown (V(BR)GSS) 40V Resistance - RDS(On) - Current Drain (Id) - Max - Lead Free Status Lead Free RoHS Status RoHS Compliant Other Names J201 J201

J201 Jfet Schematic